Insulators — Question 9

Section 41-3 · Physics pages 6848–6849

Question 9 Insulator tunneling is exponentially sensitive to thickness For a supplied rectangular-barrier model, leakage current density is J(d) = J0e−2κd with κ = 5.00 nm−1. The prefactor is held fixed while thickness changes. x V E V0 0 d Schematic; labels, not drawing lengths, specify the data. (a) Find the current ratio when d increases by .200 nm. (b) Find the thickness increase needed for a hundredfold current reduction.
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Question 9 - Solution Insulator tunneling is exponentially sensitive to thickness x V E V0 0 d (a) Method and calculation J(d + ∆d)/J(d) = e−2κ∆d. J(d + .200)/J(d) = e−2 = .1353 . (b) Interpretation and further calculation e−2κ∆d = .01 ⇒∆d = ln 100/(2κ). ∆d = .4605 nm . Physical check This is a specified tunneling regime, not thermally activated band conduction. Real applied-voltage changes can reshape the barrier and alter the assumed fixed prefactor.

Question 9

Insulator tunneling is exponentially sensitive to thickness

For a supplied rectangular-barrier model, leakage current density is J(d)=J0e−2κdJ(d)=J_0e^{-2\kappa d} with κ=5.00nm−1\kappa=5.00\,\mathrm{nm^{-1}}. The prefactor is held fixed while thickness changes.

Diagram shown in the original SVG worksheet.

  1. Find the current ratio when d increases by .200 nm.

  2. Find the thickness increase needed for a hundredfold current reduction.

Question 9 - Solution

Insulator tunneling is exponentially sensitive to thickness

Diagram shown in the original SVG worksheet.

(a) Method and calculation

J(d+Δd)/J(d)=e−2κΔd.J(d+\Delta d)/J(d)=e^{-2\kappa\Delta d}.J(d+.200)/J(d)=e−2=.1353.\boxed{J(d+.200)/J(d)=e^{-2}=.1353}.

(b) Interpretation and further calculation

e−2κΔd=.01⇒Δd=ln⁡100/(2κ).e^{-2\kappa\Delta d}=.01\Rightarrow\Delta d=\ln100/(2\kappa).Δd=.4605nm.\boxed{\Delta d=.4605\,\mathrm{nm}}.

Physical check

This is a specified tunneling regime, not thermally activated band conduction. Real applied-voltage changes can reshape the barrier and alter the assumed fixed prefactor.