Insulators — Question 8

Section 41-3 · Physics pages 6846–6847

Question 8 Subgap defect activation can dominate an insulating crystal An insulator has two independent conductivity channels: σb = Cbe−Eb/(kBT) and σd = Cde−Ed/(kBT). Let Eb = 1.00 eV, Ed = .20 eV, Cb/Cd = 108, and kB = 8.617 × 10−5 eV/K. 1/T ln σ Schematic; labels, not drawing lengths, specify the data. (a) Derive an expression for the temperature where the conductivities are equal. (b) Evaluate the crossover temperature and identify the dominant channel below it.
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Question 8 - Solution Subgap defect activation can dominate an insulating crystal 1/T ln σ (a) Method and calculation σb/σd = (Cb/Cd)e−(Eb−Ed)/(kBT). σb = σd ⇒T× = (Eb −Ed)/[kB ln(Cb/Cd)] . (b) Interpretation and further calculation T× = .80/[kB ln 108] = 504.0 K . T < T× ⇒ln(σb/σd) < 0 ⇒defect channel dominates . Physical check The small defect prefactor is overcome by its smaller activation barrier at low temperature. An apparent activation energy need not equal the intrinsic band-gap scale.

Question 8

Subgap defect activation can dominate an insulating crystal

An insulator has two independent conductivity channels: σb=Cbe−Eb/(kBT)\sigma_b=C_be^{-E_b/(k_BT)} and σd=Cde−Ed/(kBT)\sigma_d=C_de^{-E_d/(k_BT)}. Let Eb=1.00eVE_b=1.00\,\mathrm{eV}, Ed=.20eVE_d=.20\,\mathrm{eV}, Cb/Cd=108C_b/C_d=10^8, and kB=8.617×10−5eV/Kk_B=8.617\times10^{-5}\,\mathrm{eV/K}.

Diagram shown in the original SVG worksheet.

  1. Derive an expression for the temperature where the conductivities are equal.

  2. Evaluate the crossover temperature and identify the dominant channel below it.

Question 8 - Solution

Subgap defect activation can dominate an insulating crystal

Diagram shown in the original SVG worksheet.

(a) Method and calculation

σb/σd=(Cb/Cd)e−(Eb−Ed)/(kBT).\sigma_b/\sigma_d=(C_b/C_d)e^{-(E_b-E_d)/(k_BT)}.σb=σd⇒T×=(Eb−Ed)/[kBln⁡(Cb/Cd)].\sigma_b=\sigma_d\Rightarrow\boxed{T_\times=(E_b-E_d)/[k_B\ln(C_b/C_d)]}.

(b) Interpretation and further calculation

T×=.80/[kBln⁡108]=504.0K.\boxed{T_\times=.80/[k_B\ln10^8]=504.0\,\mathrm K}.T<T×⇒ln⁡(σb/σd)<0⇒defect channel dominates.T<T_\times\Rightarrow\ln(\sigma_b/\sigma_d)<0\Rightarrow\boxed{\text{defect channel dominates}}.

Physical check

The small defect prefactor is overcome by its smaller activation barrier at low temperature. An apparent activation energy need not equal the intrinsic band-gap scale.