Capacitor with a Dielectric — Question 8

Section 25-5 · Physics pages 4106–4107

Question 8 A graded dielectric requires a harmonic spatial average of permittivity A plate gap 0 ≤z ≤d is filled with κ(z) = 1 + αz/d, where alpha>0. No free charge lies within the dielectric, so D is constant and E(z) = D/[ϵ0κ(z)]. A B d κ increases Ideal plate cross-section; fringing is neglected unless stated. (a) Find the capacitance from the voltage integral. (b) Find the field ratio at the two faces and the limit as alpha tends to zero.
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Question 8 - Solution A graded dielectric requires a harmonic spatial average of permittivity A B d κ increases (a) Method and calculation V = D ϵ0 ∫d 0 dz 1 + αz/d = Dd ϵ0α ln(1 + α). C = DA V = ϵ0A d α ln(1 + α). (b) Interpretation and further calculation E(0)/E(d) = 1 + α. lim α→0 α ln(1 + α) = 1 ⇒C →ϵ0A/d. Physical check The lowest-permittivity part has the largest field and contributes most voltage per unit thickness.

Question 8

A graded dielectric requires a harmonic spatial average of permittivity

A plate gap 0≤z≤d0\le z\le d is filled with κ(z)=1+αz/d\kappa(z)=1+\alpha z/d, where alpha>0. No free charge lies within the dielectric, so D is constant and E(z)=D/[ϵ0κ(z)]E(z)=D/[\epsilon_0\kappa(z)].

Diagram shown in the original SVG worksheet.

  1. Find the capacitance from the voltage integral.

  2. Find the field ratio at the two faces and the limit as alpha tends to zero.

Question 8 - Solution

A graded dielectric requires a harmonic spatial average of permittivity

Diagram shown in the original SVG worksheet.

(a) Method and calculation

V=Dϵ0∫0ddz1+αz/d=Ddϵ0αln⁡(1+α).V=\frac D{\epsilon_0}\int_0^d\frac{dz}{1+\alpha z/d}=\frac{Dd}{\epsilon_0\alpha}\ln(1+\alpha).C=DAV=ϵ0Adαln⁡(1+α).C=\frac{DA}{V}=\frac{\epsilon_0A}{d}\frac{\alpha}{\ln(1+\alpha)}.

(b) Interpretation and further calculation

E(0)/E(d)=1+α.E(0)/E(d)=1+\alpha.limα→0αln⁡(1+α)=1⇒C→ϵ0A/d.\lim_{\alpha\to0}\frac{\alpha}{\ln(1+\alpha)}=1\Rightarrow C\to\epsilon_0A/d.

Physical check

The lowest-permittivity part has the largest field and contributes most voltage per unit thickness.