The p-n Junction — Question 10

Section 41-7 · Physics pages 6930–6931

Question 10 A critical-field model estimates reverse avalanche onset For a one-sided p+n junction, Emax = eNDW/ε and Vj = EmaxW/2. Assume avalanche begins at a specified field Ecrit = 3.00 × 107 V/m. Use ND = 1022 m−3, ε = 10−10 F/m, e = 1.60 × 10−19 C, and Vbi = .800 V. p n −xp xn |E(0)| = Ecrit Schematic; labels, not drawing lengths, specify the data. (a) Find the depletion width and total junction potential at onset. (b) Find the applied reverse voltage and its approximate scaling with doping if Ecrit is held fixed.
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Question 10 - Solution A critical-field model estimates reverse avalanche onset p n −xp xn |E(0)| = Ecrit (a) Method and calculation WB = εEcrit/(eND) = 1.875 µm . VjB = εE2 crit/(2eND) = 28.125 V . (b) Interpretation and further calculation VRB = VjB −Vbi = 27.325 V . VjB ≫Vbi ⇒VRB ≃εE2 crit/(2eND) ∝N−1 D . Physical check The critical-field assumption is an idealized avalanche model. Real critical fields depend on material and doping; tunneling breakdown and edge curvature are excluded.

Question 10

A critical-field model estimates reverse avalanche onset

For a one-sided p+np^+n junction, Emax=eNDW/εE_{\max}=eN_DW/\varepsilon and Vj=EmaxW/2V_j=E_{\max}W/2. Assume avalanche begins at a specified field Ecrit=3.00×107V/mE_{\mathrm{crit}}=3.00\times10^7\,\mathrm{V/m}. Use ND=1022m−3N_D=10^{22}\,\mathrm{m^{-3}}, ε=10−10F/m\varepsilon=10^{-10}\,\mathrm{F/m}, e=1.60×10−19Ce=1.60\times10^{-19}\,\mathrm C, and Vbi=.800VV_{bi}=.800\,\mathrm V.

Diagram shown in the original SVG worksheet.

  1. Find the depletion width and total junction potential at onset.

  2. Find the applied reverse voltage and its approximate scaling with doping if EcritE_{\mathrm{crit}} is held fixed.

Question 10 - Solution

A critical-field model estimates reverse avalanche onset

Diagram shown in the original SVG worksheet.

(a) Method and calculation

WB=εEcrit/(eND)=1.875μm.\boxed{W_B=\varepsilon E_{\mathrm{crit}}/(eN_D)=1.875\,\mu\mathrm m}.VjB=εEcrit2/(2eND)=28.125V.\boxed{V_{jB}=\varepsilon E_{\mathrm{crit}}^2/(2eN_D)=28.125\,\mathrm V}.

(b) Interpretation and further calculation

VRB=VjB−Vbi=27.325V.\boxed{V_{RB}=V_{jB}-V_{bi}=27.325\,\mathrm V}.VjB≫Vbi⇒VRB≃εEcrit2/(2eND)∝ND−1.V_{jB}\gg V_{bi}\Rightarrow\boxed{V_{RB}\simeq\varepsilon E_{\mathrm{crit}}^2/(2eN_D)\propto N_D^{-1}}.

Physical check

The critical-field assumption is an idealized avalanche model. Real critical fields depend on material and doping; tunneling breakdown and edge curvature are excluded.