The p-n Junction — Question 8

Section 41-7 · Physics pages 6926–6927

Question 8 Minority injection at the depletion edge grows exponentially For an ideal forward-biased p–n junction, minority electrons on the p side satisfy np(0) = np0eVa/VT , where np0 = n2 i /NA. Take ni = 1016 m−3, NA = 1023 m−3, VT = .0250 V, and Va = VT ln 1000. p n −xp xn electron injection Schematic; labels, not drawing lengths, specify the data. (a) Find equilibrium, biased, and excess minority densities at the edge. (b) For Dn = .00200 m2/s, Ln = 100 µm, and e = 1.60 × 10−19 C, find the injected electron-current magnitude eDn∆n(0)/Ln.
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Question 8 - Solution Minority injection at the depletion edge grows exponentially p n −xp xn electron injection (a) Method and calculation np0 = 109, np(0) = 1012 m−3 . ∆n(0) = np0(eVa/VT −1) = 9.99 × 1011 m−3 . (b) Interpretation and further calculation |Jn| = eDn∆n(0)/Ln. |Jn| = 3.197 × 10−6 A/m2 . Physical check The excess minority density remains far below the majority density, consistent with low-level injection. The exponential boundary population leads to the ideal diode current law.

Question 8

Minority injection at the depletion edge grows exponentially

For an ideal forward-biased p–n junction, minority electrons on the p side satisfy np(0)=np0eVa/VTn_p(0)=n_{p0}e^{V_a/V_T}, where np0=ni2/NAn_{p0}=n_i^2/N_A. Take ni=1016m−3n_i=10^{16}\,\mathrm{m^{-3}}, NA=1023m−3N_A=10^{23}\,\mathrm{m^{-3}}, VT=.0250VV_T=.0250\,\mathrm V, and Va=VTln⁡1000V_a=V_T\ln1000.

Diagram shown in the original SVG worksheet.

  1. Find equilibrium, biased, and excess minority densities at the edge.

  2. For Dn=.00200m2/sD_n=.00200\,\mathrm{m^2/s}, Ln=100μmL_n=100\,\mu\mathrm m, and e=1.60×10−19Ce=1.60\times10^{-19}\,\mathrm C, find the injected electron-current magnitude eDnΔn(0)/LneD_n\Delta n(0)/L_n.

Question 8 - Solution

Minority injection at the depletion edge grows exponentially

Diagram shown in the original SVG worksheet.

(a) Method and calculation

np0=109,np(0)=1012m−3.\boxed{n_{p0}=10^9,\quad n_p(0)=10^{12}\,\mathrm{m^{-3}}}.Δn(0)=np0(eVa/VT−1)=9.99×1011m−3.\boxed{\Delta n(0)=n_{p0}(e^{V_a/V_T}-1)=9.99\times10^{11}\,\mathrm{m^{-3}}}.

(b) Interpretation and further calculation

|Jn|=eDnΔn(0)/Ln.|J_n|=eD_n\Delta n(0)/L_n.|Jn|=3.197×10−6A/m2.\boxed{|J_n|=3.197\times10^{-6}\,\mathrm{A/m^2}}.

Physical check

The excess minority density remains far below the majority density, consistent with low-level injection. The exponential boundary population leads to the ideal diode current law.