Semiconductors — Question 5

Section 41-5 · Physics pages 6880–6881

Question 5 Steady optical generation raises both carrier populations Uniform illumination creates electron-hole pairs at rate G = 3.00 × 1021 m−3s−1. Use a linear excess-carrier model d∆n/dt = G −∆n/τ, with ∆p = ∆n and τ = 2.00 µs. Let µn + µp = .200 m2/(V s) and e = 1.60 × 10−19 C. photons semiconductor Schematic; labels, not drawing lengths, specify the data. (a) Find the steady excess density and photoconductivity. (b) If illumination begins at t=0 with zero excess carriers, find the time to reach 90 percent of the steady photoconductivity.
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Question 5 - Solution Steady optical generation raises both carrier populations photons semiconductor (a) Method and calculation 0 = G −∆nss/τ ⇒∆nss = Gτ = 6.00 × 1015 m−3 . ∆σ = e(µn + µp)∆nss = 1.92 × 10−4 S/m . (b) Interpretation and further calculation ∆n(t) = Gτ(1 −e−t/τ) ⇒e−t90/τ = .10. t90 = τ ln 10 = 4.605 µs . Physical check Each generated pair supplies one electron and one hole. The stated linear lifetime model assumes recombination kinetics that remain valid over the chosen excess-density range.

Question 5

Steady optical generation raises both carrier populations

Uniform illumination creates electron-hole pairs at rate G=3.00×1021m−3s−1G=3.00\times10^{21}\,\mathrm{m^{-3}s^{-1}}. Use a linear excess-carrier model dΔn/dt=G−Δn/τd\Delta n/dt=G-\Delta n/\tau, with Δp=Δn\Delta p=\Delta n and τ=2.00μs\tau=2.00\,\mu\mathrm s. Let μn+μp=.200m2/(Vs)\mu_n+\mu_p=.200\,\mathrm{m^2/(V\,s)} and e=1.60×10−19Ce=1.60\times10^{-19}\,\mathrm C.

Diagram shown in the original SVG worksheet.

  1. Find the steady excess density and photoconductivity.

  2. If illumination begins at t=0 with zero excess carriers, find the time to reach 90 percent of the steady photoconductivity.

Question 5 - Solution

Steady optical generation raises both carrier populations

Diagram shown in the original SVG worksheet.

(a) Method and calculation

0=G−Δnss/τ⇒Δnss=Gτ=6.00×1015m−3.0=G-\Delta n_{\mathrm{ss}}/\tau\Rightarrow\boxed{\Delta n_{\mathrm{ss}}=G\tau=6.00\times10^{15}\,\mathrm{m^{-3}}}.Δσ=e(μn+μp)Δnss=1.92×10−4S/m.\boxed{\Delta\sigma=e(\mu_n+\mu_p)\Delta n_{\mathrm{ss}}=1.92\times10^{-4}\,\mathrm{S/m}}.

(b) Interpretation and further calculation

Δn(t)=Gτ(1−e−t/τ)⇒e−t90/τ=.10.\Delta n(t)=G\tau(1-e^{-t/\tau})\Rightarrow e^{-t_{90}/\tau}=.10.t90=τln⁡10=4.605μs.\boxed{t_{90}=\tau\ln10=4.605\,\mu\mathrm s}.

Physical check

Each generated pair supplies one electron and one hole. The stated linear lifetime model assumes recombination kinetics that remain valid over the chosen excess-density range.