The Transistor — Question 4

Section 41-10 · Physics pages 6978–6979

Question 4 The collector load line limits an amplifier voltage swing An emitter-grounded NPN stage has VCC = 12.0 V and RC = 2.00 kΩ. Use cutoffIC = 0 and saturation limit VCE,sat = .200 V. Neglect Early effect. VCE IC Q .2 12 Schematic; labels, not drawing lengths, specify the data. (a) Find the two endpoints of the dc load line. (b) Choose the quiescent collector voltage for the largest symmetric output-voltage swing and find its collector current and maximum undistorted sinusoidal peak amplitude in this idealized model.
Show solutionHide solution
Question 4 - Solution The collector load line limits an amplifier voltage swing VCE IC Q .2 12 (a) Method and calculation VCE = VCC −ICRC ⇒(VCE, IC)cutoff= (12.0 V, 0) . IC,sat = (12.0 −.200)/2000 = 5.90 mA . (b) Interpretation and further calculation VCE,Q = (12.0 + .200)/2 = 6.10 V, IC,Q = 2.95 mA . vo,pk = min(12.0 −6.10, 6.10 −.200) = 5.90 V . Physical check The symmetric midpoint includes the nonzero saturation voltage. Real low-distortion swing is smaller because transistor behavior changes before an ideal hard clipping boundary.

Question 4

The collector load line limits an amplifier voltage swing

An emitter-grounded NPN stage has VCC=12.0VV_{CC}=12.0\,\mathrm V and RC=2.00kΩR_C=2.00\,\mathrm{k\Omega}. Use cutoff IC=0I_C=0 and saturation limit VCE,sat=.200VV_{CE,\mathrm{sat}}=.200\,\mathrm V. Neglect Early effect.

Diagram shown in the original SVG worksheet.

  1. Find the two endpoints of the dc load line.

  2. Choose the quiescent collector voltage for the largest symmetric output-voltage swing and find its collector current and maximum undistorted sinusoidal peak amplitude in this idealized model.

Question 4 - Solution

The collector load line limits an amplifier voltage swing

Diagram shown in the original SVG worksheet.

(a) Method and calculation

VCE=VCC−ICRC⇒(VCE,IC)cutoff=(12.0V,0).V_{CE}=V_{CC}-I_CR_C\Rightarrow\boxed{(V_{CE},I_C)_{\mathrm{cutoff}}=(12.0\,\mathrm V,0)}.IC,sat=(12.0−.200)/2000=5.90mA.\boxed{I_{C,\mathrm{sat}}=(12.0-.200)/2000=5.90\,\mathrm{mA}}.

(b) Interpretation and further calculation

VCE,Q=(12.0+.200)/2=6.10V,IC,Q=2.95mA.\boxed{V_{CE,Q}=(12.0+.200)/2=6.10\,\mathrm V,\quad I_{C,Q}=2.95\,\mathrm{mA}}.vo,pk=min⁡(12.0−6.10,6.10−.200)=5.90V.\boxed{v_{o,\mathrm{pk}}=\min(12.0-6.10,6.10-.200)=5.90\,\mathrm V}.

Physical check

The symmetric midpoint includes the nonzero saturation voltage. Real low-distortion swing is smaller because transistor behavior changes before an ideal hard clipping boundary.