Semiconductors — Question 4

Section 26-7 · Physics pages 4278–4279

Question 4 Increasing doping can eventually reduce conductivity in a supplied mobility model In a specified high-doping model, all donors contribute one electron and holes are negligible: n = ND. Mobility is µ(ND) = µ0/[1 + (ND/N∗)2]. ND/N∗ σ Axes and labels specify the model; the sketch is schematic. (a) Find conductivity and the donor density that maximizes it. (b) Find the maximum conductivity and compare the low- and high-doping limits.
Show solutionHide solution
Question 4 - Solution Increasing doping can eventually reduce conductivity in a supplied mobility model ND/N∗ σ (a) Method and calculation σ = eµ0N∗ x 1 + x2 , x = ND/N∗. dσ dx = eµ0N∗ 1 −x2 (1 + x2)2 = 0 ⇒ND = N∗. (b) Interpretation and further calculation σmax = eµ0N∗/2. x ≪1 : σ ≃eµ0ND; x ≫1 : σ ≃eµ0N2 ∗/ND. Physical check The optimum follows the supplied mobility law; it is not a universal claim about every doped semiconductor.

Question 4

Increasing doping can eventually reduce conductivity in a supplied mobility model

In a specified high-doping model, all donors contribute one electron and holes are negligible: n=NDn=N_D. Mobility is μ(ND)=μ0/[1+(ND/N*)2]\mu(N_D)=\mu_0/[1+(N_D/N_*)^2].

Diagram shown in the original SVG worksheet.

  1. Find conductivity and the donor density that maximizes it.

  2. Find the maximum conductivity and compare the low- and high-doping limits.

Question 4 - Solution

Increasing doping can eventually reduce conductivity in a supplied mobility model

Diagram shown in the original SVG worksheet.

(a) Method and calculation

σ=eμ0N*x1+x2,x=ND/N*.\sigma=e\mu_0N_*\frac{x}{1+x^2},\quad x=N_D/N_*.dσdx=eμ0N*1−x2(1+x2)2=0⇒ND=N*.\frac{d\sigma}{dx}=e\mu_0N_*\frac{1-x^2}{(1+x^2)^2}=0\Rightarrow N_D=N_*.

(b) Interpretation and further calculation

σmax=eμ0N*/2.\sigma_{\max}=e\mu_0N_*/2.x≪1:σ≃eμ0ND;x≫1:σ≃eμ0N*2/ND.x\ll1:\ \sigma\simeq e\mu_0N_D;\qquad x\gg1:\ \sigma\simeq e\mu_0N_*^2/N_D.

Physical check

The optimum follows the supplied mobility law; it is not a universal claim about every doped semiconductor.